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Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

Tatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.

Applied Physics Letters, 08 September 2014, Vol.105(10) [Periódico revisado por pares]

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  • Título:
    Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
  • Autor: Tatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.
  • Assuntos: Nanoscale Science And Technology
  • É parte de: Applied Physics Letters, 08 September 2014, Vol.105(10)
  • Descrição: We demonstrate a highly uniform, dense stack of In 0.22 Ga 0.78 As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.
  • Idioma: Inglês

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