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Effect of Pd on the Ni 2 Si stress relaxation during the Ni-silicide formation at low temperature

Putero, M. ; Mangelinck, D.

Applied Physics Letters, 10 September 2012, Vol.101(11) [Periódico revisado por pares]

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  • Título:
    Effect of Pd on the Ni 2 Si stress relaxation during the Ni-silicide formation at low temperature
  • Autor: Putero, M. ; Mangelinck, D.
  • Assuntos: Structural, Mechanical, Optical, And Thermodynamic Properties Of Advanced Materials
  • É parte de: Applied Physics Letters, 10 September 2012, Vol.101(11)
  • Descrição: The thermally induced solid-state reaction between a 50-nm-thick Ni(6%Pd) layer and a Si(100) substrate was investigated using in situ and simultaneous x-ray diffraction and sheet resistance. The reaction begins with the growth of the stressed δ-Ni 2 Si phase, and the transient θ-Ni 2 Si. At the end of the θ-Ni 2 Si consumption, a NiSi seed is formed. Then, the δ-Ni 2 Si relaxation occurs simultaneously with its subsequent growth and the Pd out diffusion from the unreacted Ni(Pd) layer. It is suggested that the driving force for the Pd diffusion out of the metal layer is linked to both the higher solubility of Pd in NiSi compared to Ni 2 Si and to the Ni 2 Si relaxation.
  • Idioma: Inglês

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