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Ge 2 Sb 2 Te 5 phase-change films on polyimide substrates by pulsed laser deposition

Lu, Hongbing ; Thelander, Erik ; Gerlach, Jürgen W. ; Hirsch, Dietmar ; Decker, Ulrich ; Rauschenbach, Bernd

Applied Physics Letters, 16 July 2012, Vol.101(3) [Periódico revisado por pares]

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  • Título:
    Ge 2 Sb 2 Te 5 phase-change films on polyimide substrates by pulsed laser deposition
  • Autor: Lu, Hongbing ; Thelander, Erik ; Gerlach, Jürgen W. ; Hirsch, Dietmar ; Decker, Ulrich ; Rauschenbach, Bernd
  • Assuntos: Structural, Mechanical, Optical, And Thermodynamic Properties Of Advanced Materials
  • É parte de: Applied Physics Letters, 16 July 2012, Vol.101(3)
  • Descrição: Growth of Ge 2 Sb 2 Te 5 phase-change films on flexible polyimide substrates by pulsed laser deposition (PLD) is demonstrated. The effect of annealing temperature on the crystalline nature of the films was studied. A decrease of (200) lattice plane distance with the increase of annealing temperature was revealed for the films grown on both polyimide and Si substrates, which was related to tensile stress in the crystallized films. Optical reflectivity measurements showed a high reflectivity contrast between full crystalline and amorphous films. The results indicate an excellent potential for applications of these PLD-deposited Ge 2 Sb 2 Te 5 films on flexible polyimide substrates in optical data storage.
  • Idioma: Inglês

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