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Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters

Tatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.

Applied Physics Letters, 25 June 2012, Vol.100(26) [Periódico revisado por pares]

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  • Título:
    Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters
  • Autor: Tatebayashi, J. ; Ota, Y. ; Ishida, S. ; Nishioka, M. ; Iwamoto, S. ; Arakawa, Y.
  • Assuntos: Nanoscale Science And Technology
  • É parte de: Applied Physics Letters, 25 June 2012, Vol.100(26)
  • Descrição: We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87  μ eV are observed. Light emission from the single QD-in-NW shows photon antibunching, along with biexciton-exciton cascaded emission process, which evidences single photon emission from high-quality QD-in-NWs.
  • Idioma: Inglês

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