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Electron temperature in electrically isolated Si double quantum dots

Rossi, A. ; Ferrus, T. ; Williams, D. A.

Applied Physics Letters, 26 March 2012, Vol.100(13) [Periódico revisado por pares]

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  • Título:
    Electron temperature in electrically isolated Si double quantum dots
  • Autor: Rossi, A. ; Ferrus, T. ; Williams, D. A.
  • Assuntos: Device Physics
  • É parte de: Applied Physics Letters, 26 March 2012, Vol.100(13)
  • Descrição: Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector’s conductance, we investigate the dots’ occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector’s leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.
  • Idioma: Inglês

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