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Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs

Mlayah, A. ; Carles, R. ; Landa, G. ; Bedel, E. ; Muñoz‐Yagüe, A.

Journal of Applied Physics, 01 April 1991, Vol.69(7), pp.4064-4070 [Periódico revisado por pares]

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  • Título:
    Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs
  • Autor: Mlayah, A. ; Carles, R. ; Landa, G. ; Bedel, E. ; Muñoz‐Yagüe, A.
  • Assuntos: Beryllium ; Raman-Effekt ; Plasma ; Konzentrationsverteilung ; Intermetallische Verbindung ; Sekundaerionenmassenspektrometrie ; Nahordnung ; Atomwanderung ; Temperatureinfluss ; Longitudinalwelle ; Galliumarsenid ; Engineering ; Physics
  • É parte de: Journal of Applied Physics, 01 April 1991, Vol.69(7), pp.4064-4070
  • Descrição: Raman spectroscopy measurements have been performed on GaAs:Be samples with high crystalline quality and exceptional heavy doping level ranging from 10 19 to 1.4×10 21 cm −3 . The recorded spectra show a structure we assigned to a coupled LO phonon‐damped plasmon mode. A theoretical expression for the Raman scattering rate by this mode has been derived from a dielectric model and compared to the experimental data. Using a fitting procedure the doping level of the samples has been estimated in agreement with Hall measurements. Moreover, the study of the Raman intensity evolution of both unscreened‐LO and coupled phonon‐plasmon structures, provided a convenient and rapid method to determine the activated carrier density in p ‐doped polar semiconductors. Disorder effects due to the dopant impurities have been also observed and analyzed using a spatial correlation model description.
  • Idioma: Inglês

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