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Stabilization and fine control of Ge dot structure on Si (100) by C cover layer

Wakayama, Y. ; Sokolov, L. V. ; Zakharov, N. ; Werner, P. ; Gösele, U.

Journal of Applied Physics, 01 January 2003, Vol.93(1), pp.765-767 [Periódico revisado por pares]

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  • Título:
    Stabilization and fine control of Ge dot structure on Si (100) by C cover layer
  • Autor: Wakayama, Y. ; Sokolov, L. V. ; Zakharov, N. ; Werner, P. ; Gösele, U.
  • Assuntos: Communications
  • É parte de: Journal of Applied Physics, 01 January 2003, Vol.93(1), pp.765-767
  • Descrição: A very thin layer of carbon deposited on a Ge dot surface was found to stabilize Ge dot structures. When the Ge dots were covered by the C layers, a hut with an elongated structure was maintained even after thermal annealing and a dome with a high aspect ratio was formed in Si matrix. Morphological analysis using atomic force microscopy and transmission electron microscopy revealed that stability of the Ge dot depends on the thickness of C cover layer. These results provide a method for a fine control of size and structure of the Ge dot on nanometer scale.
  • Idioma: Inglês

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