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Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga 0.95Al 0.05N

Malikova, L ; Huang, Y.S ; Pollak, Fred H ; Feng, Z.C ; Schurman, M ; Stall, R.A

Solid state communications, 1997, Vol.103(5), pp.273-278 [Periódico revisado por pares]

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  • Título:
    Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga 0.95Al 0.05N
  • Autor: Malikova, L ; Huang, Y.S ; Pollak, Fred H ; Feng, Z.C ; Schurman, M ; Stall, R.A
  • Assuntos: Chemistry ; Physics
  • É parte de: Solid state communications, 1997, Vol.103(5), pp.273-278
  • Descrição: We have measured the temperature dependence of the A, B and C excitonic transitions associated with the direct gap of wurtzite Ga 0.95Al 0.05N in the temperature range 16K T 434K using contactless electroreflectance. The parameters that describe the temperature variation of both the energies and broadening functions of the band gaps have been evaluated. The exiton-LO phonon coupling constant has been determined from an analysis of the latter quantities.
  • Idioma: Inglês

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