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Effective masses of wurtzite GaN calculated from an empirical tight binding model

Jogai, B.

Solid State Communications, 7/1998, Vol.107(7), pp.345-348 [Periódico revisado por pares]

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Título:
Effective masses of wurtzite GaN calculated from an empirical tight binding model
Autor: Jogai, B.
Assuntos: A. Semiconductors ; A. Thin Films ; D. Electronic Band Structure ; D. Spin-Orbit Effects
É parte de: Solid State Communications, 7/1998, Vol.107(7), pp.345-348
Descrição: The energy band structure of wurtzite GaN is calculated using an sp 3 d 5 - sp 3 empirical tight-binding method (ETBM) that includes the spin-orbit interaction. The model incorporates all nearest-neighbor and some second-nearest neighbor interactions within the two-center approximation. The second-nearest neighbor interactions excluded are the cation-cation interactions involving the Ga 3 d orbital. The effective masses of the conduction and A , B , and C valence bands have been calculated and found to be in good agreement with published experimental data.
Idioma: Inglês

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