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Ammothermal Growth of GaN Substrates For LEDs: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting

Soraa, Inc

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Título:
Ammothermal Growth of GaN Substrates For LEDs: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting
Autor: Soraa, Inc
Assuntos: 29 Energy Planning, Policy And Economy ; 32 Energy Conservation, Consumption, And Utilization ; ARPA-E ; building efficiency ; building efficiency projects ; crystal growth ; crystal growth methods ; funding opportunity announcements ; Gallium nitrides ; lasers ; lighting market ; manufacturing ; monocrystals ; substrates
Notas: 2011-01-01-2013-03-31
Descrição: Advanced Research Projects Agency-Energy project sheet summarizing general information about a new program to develop less expensive, more efficient LEDs (project title "High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting") including critical needs, innovation and advantages, impacts, and contact information. This sheet is the first open solicitation, announcing funding opportunities for involvement in the project.
Editor: United States. Department of Energy
Data de criação/publicação: 2012
Idioma: Inglês

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