Idioma:

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Tuktamyshev, A. ; Fedorov, A. ; Bietti, S. ; Vichi, S. ; Zeuner, K. D. ; Jöns, K. D. ; Chrastina, D. ; Tsukamoto, S. ; Zwiller, V. ; Gurioli, M. ; Sanguinetti, S.

Applied physics letters, 2021-03, Vol.118 (13) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por

Título:
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
Autor: Tuktamyshev, A. ; Fedorov, A. ; Bietti, S. ; Vichi, S. ; Zeuner, K. D. ; Jöns, K. D. ; Chrastina, D. ; Tsukamoto, S. ; Zwiller, V. ; Gurioli, M. ; Sanguinetti, S.
Assuntos: Communication networks ; Droplets ; Epitaxial growth ; Fine structure ; Flat surfaces ; Gallium arsenide ; Indium aluminum arsenides ; Indium arsenides ; Nucleation ; Photons ; Quantum dots ; Self assembly ; Splitting ; Substrates ; Telecommunications
É parte de: Applied physics letters, 2021-03, Vol.118 (13)
Descrição: We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed on the quantum dot from the surface, allows a fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content ≥50% directly deposited on the GaAs substrate is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 μm telecom O-band with fine structure splitting as low as 16 μeV, thus making them suitable as photon sources in quantum communication networks using entangled photons.
Editor: Melville: American Institute of Physics
Idioma: Inglês

Links

Voltar para lista de resultados