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Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

Xiang, Du ; Han, Cheng ; Wu, Jing ; Zhong, Shu ; Liu, Yiyang ; Lin, Jiadan ; Zhang, Xue-Ao ; Ping Hu, Wen ; Özyilmaz, Barbaros ; Neto, A H Castro ; Wee, Andrew Thye Shen ; Chen, Wei

Nature communications, 2015-03, Vol.6 (1), p.6485-6485, Article 6485 [Periódico revisado por pares]

England: Nature Publishing Group

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  • Título:
    Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus
  • Autor: Xiang, Du ; Han, Cheng ; Wu, Jing ; Zhong, Shu ; Liu, Yiyang ; Lin, Jiadan ; Zhang, Xue-Ao ; Ping Hu, Wen ; Özyilmaz, Barbaros ; Neto, A H Castro ; Wee, Andrew Thye Shen ; Chen, Wei
  • É parte de: Nature communications, 2015-03, Vol.6 (1), p.6485-6485, Article 6485
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm(2) V(-1) s(-1) after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.
  • Editor: England: Nature Publishing Group
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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