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Miniature MEMS Switches for RF Applications

Stefanini, R. ; Chatras, M. ; Blondy, P. ; Rebeiz, G. M.

Journal of microelectromechanical systems, 2011-12, Vol.20 (6), p.1324-1335 [Periódico revisado por pares]

New York, NY: IEEE

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Título:
Miniature MEMS Switches for RF Applications
Autor: Stefanini, R. ; Chatras, M. ; Blondy, P. ; Rebeiz, G. M.
Assuntos: Applied sciences ; Array ; Circuit properties ; Contact ; contact resistance ; Design engineering ; Devices ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Mechanical instruments, equipment and techniques ; Microelectromechanical systems ; Micromechanical devices and systems ; Microswitches ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Miniature ; Physics ; Radio frequencies ; Radio frequency ; Stress ; stress control ; Switches ; Switching ; Temperature measurement ; Transmission line measurements
É parte de: Journal of microelectromechanical systems, 2011-12, Vol.20 (6), p.1324-1335
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: This paper presents a new way to design MEMS (microelectromechanical system) metal contact switches for RF applications using miniature MEMS cantilevers. A single 25 × 25 μm switch is first demonstrated with a Au-to-Ru contact, C u = 5 fF and R on = 7 Ω at an actuation voltage of 55 V. The measured switching time is 2.2 μs and the release time is <;1 μs. The switch is robust to stress effects (residual and stress gradients) which increases its yield on large wafers. To reduce the effective switch resistance, 10-20 miniature RF MEMS switches have been placed in parallel and result in equal current division between the switches, an up-state capacitance of 30-65 fF and a down-state resistance of 1.4-1.5 Ω. Furthermore, 10-20 element back-to-back switch arrays are developed and result in a marked improvement in the reliability of the overall switching device. A series-shunt design is also demonstrated with greatly improved isolation. The device has a figure-of-merit of f c = 1/(2πR on C u ) = 3.8 THz (R on C u = 42 fs).
Editor: New York, NY: IEEE
Idioma: Inglês

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Miniature MEMS Switches for RF Applications

Stefanini, R. ; Chatras, M. ; Blondy, P. ; Rebeiz, G. M.

New York, NY: IEEE

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