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Weak localization in CdO thin films prepared by sol–gel method

Wang, W.J. ; Xie, X.J. ; Liu, J.Y. ; Gao, K.H.

Solid state communications, 2016-07, Vol.239, p.1-4 [Periódico revisado por pares]

Elsevier Ltd

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  • Título:
    Weak localization in CdO thin films prepared by sol–gel method
  • Autor: Wang, W.J. ; Xie, X.J. ; Liu, J.Y. ; Gao, K.H.
  • Assuntos: A. CdO ; C. Scanning electron microscopy ; D. Electron–electron scattering ; D. Weak localization effect
  • É parte de: Solid state communications, 2016-07, Vol.239, p.1-4
  • Descrição: This paper reports the study of the magnetotransport properties of polycrystalline CdO thin films prepared by the sol–gel method. Both the sheet resistance and electron density as a function of temperature indicate that our samples are degenerate semiconductors. The weak localization (WL) effect is observed in the low temperature range. Applying the two-dimensional WL theory, we have extracted the dephasing length and a relatively large value (the maximum gets to 151nm at 2K) is obtained. The temperature dependence of the extracted dephasing length can be well described by the electron–electron scattering process, indicating that the electron–electron scattering is main dephasing mechanism for electrons. •The magnetotransport properties have been measured on polycrystalline CdO thin films prepared by the sol–gel method.•Temperature dependences of sheet resistance and electron density indicate that the samples are degenerate semiconductors.•Two-dimensional weak localization (WL) effect is observed in the low temperature range.•Electron–electron scattering dominates the electron dephasing mechanism.
  • Editor: Elsevier Ltd
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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