0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth
Wada, S. ; Furuhata, N. ; Tokushima, M. ; Fukaishi, M. ; Hida, H. ; Maeda, T.
Proceedings of International Electron Devices Meeting, 1995, p.197-200IEEE
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