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Achievement of a near-perfect smooth silicon surface

Li, Jing ; Liu, YuHong ; Dai, YuanJing ; Yue, DaChuan ; Lu, XinChun ; Luo, JianBin

Science China. Technological sciences, 2013-11, Vol.56 (11), p.2847-2853 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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  • Título:
    Achievement of a near-perfect smooth silicon surface
  • Autor: Li, Jing ; Liu, YuHong ; Dai, YuanJing ; Yue, DaChuan ; Lu, XinChun ; Luo, JianBin
  • Assuntos: Atomic force microscopy ; Chemical-mechanical polishing ; Devices ; Engineering ; Oxidizers ; Polished ; Silicon ; Surface roughness ; Ultra Large Scale Integration ; 光滑表面 ; 原子力显微镜 ; 原子尺度 ; 硅表面 ; 聚氨基甲酸乙酯 ; 表面活性剂 ; 表面粗糙度 ; 超大规模集成电路
  • É parte de: Science China. Technological sciences, 2013-11, Vol.56 (11), p.2847-2853
  • Notas: silicon, CMP, AFM, roughness
    During the ultra large scale integration （ULSI） process, the surface roughness of the polished silicon wafer plays an important role in the quality and rate of production of devices. In this work, the effects of oxidizer, surfactant, polyurethane pad and slurry additives on the surface roughness and topography of chemical-mechanical planarization （CMP） for silicon have been investigated. A standard atomic force microscopy （AFM） test method for the atomic scale smooth surface was proposed and used to measure the polished silicon surfaces. Finally, compared with the theoretical calculated Ra value of 0.0276 rim, a near-perfect silicon surface with the surface roughness at an atomic scale （0.5 4） was achieved based on an optimized CMP process.
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  • Descrição: During the ultra large scale integration （ULSI） process, the surface roughness of the polished silicon wafer plays an important role in the quality and rate of production of devices. In this work, the effects of oxidizer, surfactant, polyurethane pad and slurry additives on the surface roughness and topography of chemical-mechanical planarization （CMP） for silicon have been investigated. A standard atomic force microscopy （AFM） test method for the atomic scale smooth surface was proposed and used to measure the polished silicon surfaces. Finally, compared with the theoretical calculated Ra value of 0.0276 rim, a near-perfect silicon surface with the surface roughness at an atomic scale （0.5 4） was achieved based on an optimized CMP process.
  • Editor: Berlin/Heidelberg: Springer Berlin Heidelberg
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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