skip to main content
Visitante
Meu Espaço
Minha Conta
Sair
Identificação
This feature requires javascript
Tags
Revistas Eletrônicas (eJournals)
Livros Eletrônicos (eBooks)
Bases de Dados
Bibliotecas USP
Ajuda
Ajuda
Idioma:
Inglês
Espanhol
Português
This feature required javascript
This feature requires javascript
Primo Search
Busca Geral
Busca Geral
Acervo Físico
Acervo Físico
Produção Intelectual da USP
Produção USP
Search For:
Clear Search Box
Search in:
Busca Geral
Or select another collection:
Search in:
Busca Geral
Busca Avançada
Busca por Índices
This feature requires javascript
This feature requires javascript
TECHNIQUES FOR EXPERIMENTAL FABRICATION OF A 1WATT, 1-GC GALLIUM ARSENIDE TRANSISTOR
Belasco,Melvin ; Wurst,E C ; Sangster,R C
1963
Texto completo disponível
Citações
Citado por
Exibir Online
Detalhes
Resenhas & Tags
Mais Opções
Nº de Citações
This feature requires javascript
Enviar para
Adicionar ao Meu Espaço
Remover do Meu Espaço
E-mail (máximo 30 registros por vez)
Imprimir
Link permanente
Referência
EasyBib
EndNote
RefWorks
del.icio.us
Exportar RIS
Exportar BibTeX
This feature requires javascript
Título:
TECHNIQUES FOR EXPERIMENTAL FABRICATION OF A 1WATT, 1-GC GALLIUM ARSENIDE TRANSISTOR
Autor:
Belasco,Melvin
;
Wurst,E C
;
Sangster,R C
Assuntos:
ALUMINUM ALLOYS
;
ARSENIC ALLOYS
;
CAPACITANCE
;
DIFFUSION
;
EPITAXIAL GROWTH
;
GAIN
;
GALLIUM ALLOYS
;
IMPURITIES
;
LIFE EXPECTANCY(SERVICE LIFE)
;
MANUFACTURING
;
MEASUREMENT
;
OXIDES
;
SILICON COMPOUNDS
;
TELLURIUM
;
TEMPERATURE
;
TIN ALLOYS
;
TRACER STUDIES
;
TRANSISTORS
;
ULTRAHIGH FREQUENCY
;
ZINC
Notas:
DTIC AND NTIS
Descrição:
Gallium arsenide transistors with zinc-diffused base structures were built during this quarter. These transistors were built on both melt-grown and n on n epitaxial gallium arsenide. The common emitter current gain cutoff frequency of the transistors was between 300 and 700 mc. The dc current gain was tipically 7, with many ranging up to 20 and 30. Gallium arsenide transistors were also fabricated from p on n epitaxial material. These devices featured uniformly high values of h sub FE, typically 25. The f sub t's were on the order of 80 mc. Transistors were also made using an evaporated emitter stripe geometry on Zn-diffused GaAs. The high temperature (200 C) characteristics of a number of Zn transistors were studied during the quarter. Fifty state-ofthe-art Zn-diffused devices have been placed on life test. Radiotracer studies on zinc diffusion show that the shallow junction depth and low surface concentrations needed for an evaporated stripe structure are obtainable with diffusions from SiO2 films. Tracer work on n-type impurity diffusion in GaAs was continued using S35 as a source impurity for diffusion work through oxide films. Junction capacitance vs applied voltage studies have been made on Zn-diffused diodes to double-check the impurity profiles. Similar measurements were also made on Te diodes. (Author)
Data de criação/publicação:
1963
Idioma:
Inglês
Links
View record in DTIC$$FView record in $$GDTIC
This feature requires javascript
This feature requires javascript
Voltar para lista de resultados
This feature requires javascript
This feature requires javascript
Buscando em bases de dados remotas. Favor aguardar.
Buscando por
em
scope:(USP_PRODUCAO),scope:(USP_EBOOKS),scope:("PRIMO"),scope:(USP),scope:(USP_EREVISTAS),scope:(USP_FISICO),primo_central_multiple_fe
Mostrar o que foi encontrado até o momento
This feature requires javascript
This feature requires javascript