Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

Lin, Y. S. ; Zeng, F. ; Tang, S. G. ; Liu, H. Y. ; Chen, C. ; Gao, S. ; Wang, Y. G. ; Pan, F.

Journal of applied physics, 2013-02, Vol.113 (6) [Periódico revisado por pares]

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