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Cascode turn-off of field-controlled integrated thyristors

Grekhov, I. V. ; Rozhkov, A. V. ; Kostina, L. S. ; Zitta, N. F. ; Matveev, V. I. ; Mashovets, D. V.

Technical physics, 2010, Vol.55 (1), p.154-157 [Periódico revisado por pares]

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Título:
Cascode turn-off of field-controlled integrated thyristors
Autor: Grekhov, I. V. ; Rozhkov, A. V. ; Kostina, L. S. ; Zitta, N. F. ; Matveev, V. I. ; Mashovets, D. V.
Assuntos: Classical and Continuum Physics ; Physics ; Physics and Astronomy ; Short Communications
É parte de: Technical physics, 2010, Vol.55 (1), p.154-157
Descrição: The residual voltage drop in the on state of an insulated-gate bipolar transistor, the basic device of today’s power electronics, is considerably higher than that of conventional thyristor-type devices, which is a serious disadvantage of the former. Field-controlled integrated thyristors offering a low residual voltage, as with conventional thyristors, and, at the same time, low turn-on and turn-off power losses in the control circuit, as is the case with insulated-gate bipolar transistors, seem to be promising for high-voltage high-power applications. Turn-off of these devices in the cascode mode with a series-connected low-voltage powerful FET is studied.
Editor: Dordrecht: SP MAIK Nauka/Interperiodica
Idioma: Inglês

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