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Well-matched vibrations cool electronic hotspots

Sang, Liwen

Nature (London), 2024-03, Vol.627 (8005), p.743-744 [Periódico revisado por pares]

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Título:
Well-matched vibrations cool electronic hotspots
Autor: Sang, Liwen
Assuntos: Carbon ; Diamonds ; Electron microscopy ; Engineering ; Gallium ; Heat ; Heat transport ; Integrated circuits ; Interfaces ; Phonons ; Semiconductors ; Silica ; Silicon ; Silicon carbide ; Silicon nitride ; Transistors ; Vibrations
É parte de: Nature (London), 2024-03, Vol.627 (8005), p.743-744
Descrição: The phonons in silicon carbide have a density of states (the proportion of states available at a given energy) that is identical to that of the phonons in diamond. By reducing the thickness of the silicon nitride layer and converting part of it into silicon carbide, the authors achieved a resistance of 3.1 square metres kelvin per gigawatt - less than half than that reported previously for an interface comprising diamond, silicon nitride and gallium nitride7,10. Using a form of electron microscopy, they showed that the interface between diamond and silicon carbide was not abrupt, which made it ideal for heat transport because it smoothed the phonon transition between materials.
Editor: London: Nature Publishing Group
Idioma: Inglês

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