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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Larsson, Magnus W ; Wagner, Jakob B ; Wallin, Mathias ; Håkansson, Paul ; Fröberg, Linus E ; Samuelson, Lars ; Wallenberg, L Reine

Nanotechnology, 2007-01, Vol.18 (1), p.015504-015504 (8) [Periódico revisado por pares]

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Título:
Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
Autor: Larsson, Magnus W ; Wagner, Jakob B ; Wallin, Mathias ; Håkansson, Paul ; Fröberg, Linus E ; Samuelson, Lars ; Wallenberg, L Reine
Assuntos: Engineering and Technology ; Nano Technology ; Nanoteknik ; Teknik
É parte de: Nanotechnology, 2007-01, Vol.18 (1), p.015504-015504 (8)
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Editor: IOP Publishing
Idioma: Inglês

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