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(001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors

Olguín, D ; Baquero, R

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(001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors
Autor: Olguín, D ; Baquero, R
Assuntos: Physics - Disordered Systems and Neural Networks ; Physics - Materials Science ; Physics - Mesoscale and Nanoscale Physics ; Physics - Other Condensed Matter ; Physics - Quantum Gases ; Physics - Soft Condensed Matter ; Physics - Statistical Mechanics ; Physics - Strongly Correlated Electrons ; Physics - Superconductivity
Descrição: In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and H\"ochst. We have characterized this band as a surface--induced bulk state. In a second paper we showed that a similar state does exist in II--VI and III--V zincblende semiconductor compounds. In this paper we show that there are more such states within the valence band energy interval. We use tight-binding hamiltonians and the surface Green's function matching method to calculate the surface and surface--induced bulk states in the wide band gap zincblende semiconductors CdTe, CdSe, ZnTe and ZnSe. We find a distinctive surface state for the cation and two for the anion termination of the (001)--surface and three (001)--surface--induced bulk states with energies that correspond to the value of the heavy hole, light hole and spin--orbit bands at $X$.
Data de criação/publicação: 1995-01
Idioma: Inglês

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