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In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering

Cantas, Ayten ; Aygun, Gulnur ; Basa, Deepak Kumar

Journal of applied physics, 2014-08, Vol.116 (8) [Periódico revisado por pares]

United States

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  • Título:
    In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering
  • Autor: Cantas, Ayten ; Aygun, Gulnur ; Basa, Deepak Kumar
  • Assuntos: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DEPOSITS ; ELLIPSOMETRY ; HAFNIUM OXIDES ; HYDROFLUORIC ACID ; LAYERS ; MAGNETRONS ; MATERIALS SCIENCE ; METALS ; RADIOWAVE RADIATION ; SILICA ; SILICON ; SILICON OXIDES ; SPUTTERING ; SUBSTRATES ; TEMPERATURE RANGE 0273-0400 K ; THIN FILMS ; X-RAY DIFFRACTION
  • É parte de: Journal of applied physics, 2014-08, Vol.116 (8)
  • Descrição: We have investigated the reduction of unwanted interfacial SiO{sub 2} layer at HfO{sub 2}/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO{sub 2} thin films for possible direct contact between HfO{sub 2} thin film and Si substrate, necessary for the future generation devices based on high-κ HfO{sub 2} gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO{sub 2} thin films and also to undertake the in-situ characterization of the high-κ HfO{sub 2} thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO{sub 2} layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO{sub 2} thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO{sub 2} thin films are crystalline although they were deposited at room temperature.
  • Editor: United States
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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