Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications
Wu, Jui-Sheng ; Weng, You-Chen ; Yang, Tsung-Ying ; Wu, Chia-Hsun ; Lee, Chih-Chieh ; Iwai, Hiroshi ; Chang, Edward Yi
Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, Inc
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