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High voltage and high current density vertical GaN power diodes

Armstrong, A.M ; Allerman, A.A ; Fischer, A.J ; King, M.P ; van Heukelom, M.S ; Moseley, M.W ; Kaplar, R.J ; Wierer, J.J ; Crawford, M.H ; Dickerson, J.R

Electronics letters, 2016-06, Vol.52 (13), p.1170-1171 [Periódico revisado por pares]

United States: The Institution of Engineering and Technology

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Título:
High voltage and high current density vertical GaN power diodes
Autor: Armstrong, A.M ; Allerman, A.A ; Fischer, A.J ; King, M.P ; van Heukelom, M.S ; Moseley, M.W ; Kaplar, R.J ; Wierer, J.J ; Crawford, M.H ; Dickerson, J.R
Assuntos: 30 DIRECT ENERGY CONVERSION ; Breakdown ; critical electric field ; current density ; Density ; Diodes ; Electric fields ; Electric power generation ; Electronics ; ENGINEERING ; gallium compounds ; Gallium nitrides ; GaN ; high current density vertical power diodes ; high voltage vertical p–n diode ; High voltages ; III‐V semiconductors ; power semiconductor diodes ; reverse current–voltage characteristics ; semiconductor device breakdown ; Semiconductor technology ; wide band gap semiconductors
É parte de: Electronics letters, 2016-06, Vol.52 (13), p.1170-1171
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
SAND-2016-7478J
AC04-94AL85000
USDOE National Nuclear Security Administration (NNSA)
Descrição: The realisation of a GaN high voltage vertical p–n diode operating at >3.9 kV breakdown with a specific on-resistance <0.9 mΩ cm2 is reported. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density >1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current–voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
Editor: United States: The Institution of Engineering and Technology
Idioma: Inglês

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High voltage and high current density vertical GaN power diodes

Armstrong, A.M ; Allerman, A.A ; Fischer, A.J ; King, M.P ; van Heukelom, M.S ; Moseley, M.W ; Kaplar, R.J ; Wierer, J.J ; Crawford, M.H ; Dickerson, J.R

United States: The Institution of Engineering and Technology

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