Correlation between the residual stress in 3C-SiC Si epifilm and the quality of epitaxial graphene formed thereon

Bantaculo, R ; Fukidome, H ; Suemitsu, M

IOP conference series. Materials Science and Engineering, 2015-06, Vol.79 (1), p.12004 [Periódico revisado por pares]

Bristol: IOP Publishing

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