Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Ji, Dong ; Lu, Yanwu ; Liu, Bing ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo

Thin solid films, 2013-05, Vol.534, p.655-658 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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