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(100) Oriented CoFe2O4 Films Prepared by Reactive Ion Beam Sputtering

Mamiya, Keisuke ; Kubota, Yuki ; Nakagawa, Shigeki

Journal of the Japan Society of Powder and Powder Metallurgy, 2012/03/15, Vol.59(3), pp.145-148

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Título:
(100) Oriented CoFe2O4 Films Prepared by Reactive Ion Beam Sputtering
Autor: Mamiya, Keisuke ; Kubota, Yuki ; Nakagawa, Shigeki
Assuntos: Co ferrite ; Ferrite ; Ion beam sputtering ; Iron ; Lattices ; Magnesium oxide ; reactive sputtering ; Residual stress ; spin filter ; spinel ; Surface layer ; Texture
É parte de: Journal of the Japan Society of Powder and Powder Metallurgy, 2012/03/15, Vol.59(3), pp.145-148
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: Co ferrite films have been grown by a reactive ion beam sputtering under the Kr and O2 mixture atmosphere. Most of the film contains (100) texture of Co spinel ferrite when the partial pressure ratio of O2 is 8.6 %. Completely (100) orientated CoFe2O4 films can be grown on Fe (10 nm)/MgO (10 nm) underlayer with (100) orientation. 5 nm-thick (100) CoFe2O4 film is observed prepared at substrate temperature of 200°C. The (100) texture and the expansion of the lattice are the origin of the in-plane magnetic anisotropy. The internal stress expanding to perpendicular to plane is released at high substrate temperature. Thus, lattice expansion getting smaller at 200°C than 100°C. (100) well orientated CoFe2O4 films can be grown not only Fe/MgO dual underlayer, but on Fe (10 nm) single underlayer.
Editor: Japan Society of Powder and Powder Metallurgy
Idioma: Japonês

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