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A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Zhang, Fanlu ; Zhang, Xutao ; Li, Ziyuan ; Yi, Ruixuan ; Li, Zhe ; Wang, Naiyin ; Xu, Xiaoxue ; Azimi, Zahra ; Li, Li ; Lysevych, Mykhaylo ; Gan, Xuetao ; Lu, Yuerui ; Tan, Hark Hoe ; Jagadish, Chennupati ; Fu, Lan

Advanced functional materials, 2022-01, Vol.32 (3), p.n/a [Periódico revisado por pares]

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Título:
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications
Autor: Zhang, Fanlu ; Zhang, Xutao ; Li, Ziyuan ; Yi, Ruixuan ; Li, Zhe ; Wang, Naiyin ; Xu, Xiaoxue ; Azimi, Zahra ; Li, Li ; Lysevych, Mykhaylo ; Gan, Xuetao ; Lu, Yuerui ; Tan, Hark Hoe ; Jagadish, Chennupati ; Fu, Lan
Assuntos: Arrays ; Broadband ; Epitaxy ; Heterostructures ; Indium gallium arsenides ; Indium phosphides ; infrared photodetectors ; InGaAs/InP ; lasing ; Light sources ; Metalorganic chemical vapor deposition ; Multi Quantum Wells ; Nanowires ; Optical properties ; Optical pumping ; Optoelectronic devices ; Photometers ; quantum well ; Vapor phase epitaxy ; Vapor phases ; Wurtzite ; Zincblende
É parte de: Advanced functional materials, 2022-01, Vol.32 (3), p.n/a
Descrição: III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact light sources and photodetectors from visible to infrared spectral region. However, most of the reported InGaAs/InP QW nanowires are based on the wurtzite phase and exhibit non‐uniform morphology due to the complex heterostructure growth, making it challenging to incorporate multiple‐QWs (MQW) for optoelectronic applications. Here, a new strategy for the growth of InGaAs/InP MQW nanowire arrays by selective area metalorganic vapor phase epitaxy is reported. It is revealed that {110} faceted InP nanowires with mixed zincblende and wurtzite phases can be achieved, forming a critical base for the subsequent growth of highly‐uniform, taper‐free, hexagonal‐shaped MQW nanowire arrays with excellent optical properties. Room‐temperature lasing at the wavelength of ≈1 µm under optical pumping is achieved with a low threshold. By incorporating dopants to form an n+‐i‐n+ structure, InGaAs/InP 40‐QW nanowire array photodetectors are demonstrated with the broadband response (400–1600 nm) and high responsivities of 2175 A W−1 at 980 nm outperforming those of conventional planar InGaAs photodetectors. The results show that the new growth strategy is highly feasible to achieve high‐quality InGaAs/InP MQW nanowires for the development of future optoelectronic devices and integrated photonic systems. A new facet engineering strategy is proposed to achieve the epitaxial growth of highly uniform InGaAs/InP multiple quantum well nanowires. The nanowires exhibit low threshold optically pumped lasing at room temperature and are fabricated into broadband photodetectors with high responsivity and fast response time. Such a growth strategy can pave the way for a wide range of nanoscale optoelectronic applications.
Editor: Hoboken: Wiley Subscription Services, Inc
Idioma: Inglês

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A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications

Zhang, Fanlu ; Zhang, Xutao ; Li, Ziyuan ; Yi, Ruixuan ; Li, Zhe ; Wang, Naiyin ; Xu, Xiaoxue ; Azimi, Zahra ; Li, Li ; Lysevych, Mykhaylo ; Gan, Xuetao ; Lu, Yuerui ; Tan, Hark Hoe ; Jagadish, Chennupati ; Fu, Lan

Hoboken: Wiley Subscription Services, Inc

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