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Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films

Makino, T. ; Segawa, Y. ; Kawasaki, M. ; Ohtomo, A. ; Shiroki, R. ; Tamura, K. ; Yasuda, T. ; Koinuma, H.

Applied physics letters, 2001-02, Vol.78 (9), p.1237-1239 [Periódico revisado por pares]

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Título:
Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
Autor: Makino, T. ; Segawa, Y. ; Kawasaki, M. ; Ohtomo, A. ; Shiroki, R. ; Tamura, K. ; Yasuda, T. ; Koinuma, H.
É parte de: Applied physics letters, 2001-02, Vol.78 (9), p.1237-1239
Descrição: We describe the structural and optical properties of II–VI oxide alloys, MgxZn1−xO and CdyZn1−yO, grown by pulsed-laser deposition. Single-phase alloyed films of (Mg,Zn)O and (Cd,Zn)O with c-axis orientations were epitaxially grown on sapphire (0001) substrates. The maximum magnesium and cadmium concentrations (x=0.33 and y=0.07, respectively) were significantly larger than the thermodynamic solubility limits. The band gap energies systematically changed from 3.0 (y=0.07) to 4.0 eV (x=0.33) at room temperature. The photoluminescence peak energy deduced at 4.2 K could be tuned from 3.19 to 3.87 eV by using Cd0.07Zn0.93O and Mg0.33Zn0.67O at both ends, respectively. The lattice constants of the a axis were monotonically increasing functions of the concentrations of both alloys. The exciton–phonon coupling strength was determined in Cd0.01Zn0.99O grown on a lattice-matched ScAlMgO4 substrate.
Idioma: Inglês

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