Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

Cipro, R. ; Baron, T. ; Martin, M. ; Moeyaert, J. ; David, S. ; Gorbenko, V. ; Bassani, F. ; Bogumilowicz, Y. ; Barnes, J. P. ; Rochat, N. ; Loup, V. ; Vizioz, C. ; Allouti, N. ; Chauvin, N. ; Bao, X. Y. ; Ye, Z. ; Pin, J. B. ; Sanchez, E.

Applied physics letters, 2014-06, Vol.104 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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