Low defect InGaAs quantum well selectively grown by MOCVD on Si(100) 300 mm wafers for next generation non planar devices
Cipro, R. ; Baron, T. ; Martin, M. ; Moeyaert, J. ; David, S. ; Gorbenko, V. ; Bassani, F. ; Bogumilowicz, Y. ; Barnes, J. ; Rochat, N. ; Loup, V. ; Vizioz, C. ; Allouti, N. ; Chauvin, Nicolas ; Bao, X. ; Ye, Z. ; Pin, J. ; Sanchez, E.
Applied physics letters, 2014-07, Vol.104 (26) [Periódico revisado por pares]American Institute of Physics
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