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Low defect InGaAs quantum well selectively grown by MOCVD on Si(100) 300 mm wafers for next generation non planar devices

Cipro, R. ; Baron, T. ; Martin, M. ; Moeyaert, J. ; David, S. ; Gorbenko, V. ; Bassani, F. ; Bogumilowicz, Y. ; Barnes, J. ; Rochat, N. ; Loup, V. ; Vizioz, C. ; Allouti, N. ; Chauvin, Nicolas ; Bao, X. ; Ye, Z. ; Pin, J. ; Sanchez, E.

Applied physics letters, 2014-07, Vol.104 (26) [Periódico revisado por pares]

American Institute of Physics

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Título:
Low defect InGaAs quantum well selectively grown by MOCVD on Si(100) 300 mm wafers for next generation non planar devices
Autor: Cipro, R. ; Baron, T. ; Martin, M. ; Moeyaert, J. ; David, S. ; Gorbenko, V. ; Bassani, F. ; Bogumilowicz, Y. ; Barnes, J. ; Rochat, N. ; Loup, V. ; Vizioz, C. ; Allouti, N. ; Chauvin, Nicolas ; Bao, X. ; Ye, Z. ; Pin, J. ; Sanchez, E.
Assuntos: Engineering Sciences ; Materials ; Micro and nanotechnologies ; Microelectronics ; Optics ; Photonic
É parte de: Applied physics letters, 2014-07, Vol.104 (26)
Descrição: Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO2 cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.
Editor: American Institute of Physics
Idioma: Inglês

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Low defect InGaAs quantum well selectively grown by MOCVD on Si(100) 300 mm wafers for next generation non planar devices

Cipro, R. ; Baron, T. ; Martin, M. ; Moeyaert, J. ; David, S. ; Gorbenko, V. ; Bassani, F. ; Bogumilowicz, Y. ; Barnes, J. ; Rochat, N. ; Loup, V. ; Vizioz, C. ; Allouti, N. ; Chauvin, Nicolas ; Bao, X. ; Ye, Z. ; Pin, J. ; Sanchez, E.

American Institute of Physics

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