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Rapid Anisotropic Chemical Etching for Quick Formation of Novel Octagonal Pyramids on Silicon Surface for Photovoltaics

Iqbal, Sami ; Hussain, Azam ; Weiping Wu ; Su, Dan ; Yang, Yi ; Xinli Guo ; Zhang, Tong

Science Data Bank 2023

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  • Título:
    Rapid Anisotropic Chemical Etching for Quick Formation of Novel Octagonal Pyramids on Silicon Surface for Photovoltaics
  • Autor: Iqbal, Sami ; Hussain, Azam ; Weiping Wu ; Su, Dan ; Yang, Yi ; Xinli Guo ; Zhang, Tong
  • Assuntos: Basic discipline of engineering and technology ; Chemical ; Information and systems science related engineering and technology ; Information science and systems science ; Mechanics ; Natural science related engineering and technology ; Octagonal Pyramids ; Physics ; Rapid Etching ; Solar Cells ; Surface Chemistry ; Surface Engineering
  • Notas: 10.1016/j.surfin.2022.102205
    RelationTypeNote: IsSupplementTo -- 10.1016/j.surfin.2022.102205
  • Descrição: A novel octagonal micro pyramid structure was formed by etching a monocrystalline silicon wafer (100) by employing a wet chemical anisotropic etching process. The main objective is to reduce the silicon wafer's front surface reflectance, improve surface morphology, enhance wettability, and increase the coverage area of the octagonal pyramids on the surface of silicon wafers. The reaction time of the etching process was kept precise under strict observation and control. The experimental results demonstrate a significant reduction in silicon wafers' optical surface reflectance, achieving the lowest reflectance of 8.87%, along with improved surface morphology, periodicity, and coverage of more than 88%. While adding hydrofluoric acid together with magnetic stirring (mechanical agitation) at 300 rpm was advantageous in forming the octagonal silicon pyramid with a high etch rate of 0.41 um/min and significantly reducing the reaction time. A novel octagonal micro pyramid structure was formed by etching a monocrystalline silicon wafer (100) by employing a wet chemical anisotropic etching process. The main objective is to reduce the silicon wafer's front surface reflectance, improve surface morphology, enhance wettability, and increase the coverage area of the octagonal pyramids on the surface of silicon wafers. The reaction time of the etching process was kept precise under strict observation and control. The experimental results demonstrate a significant reduction in silicon wafers' optical surface reflectance, achieving the lowest reflectance of 8.87%, along with improved surface morphology, periodicity, and coverage of more than 88%. While adding hydrofluoric acid together with magnetic stirring (mechanical agitation) at 300 rpm was advantageous in forming the octagonal silicon pyramid with a high etch rate of 0.41 um/min and significantly reducing the reaction time.
  • Editor: Science Data Bank
  • Data de criação/publicação: 2023
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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