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0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

Wang, G.W. ; Feng, M. ; Lau, C.L. ; Ito, C. ; Lepkowski, T.R.

IEEE electron device letters, 1989-05, Vol.10 (5), p.186-188 [Periódico revisado por pares]

New York, NY: IEEE

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Título:
0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs
Autor: Wang, G.W. ; Feng, M. ; Lau, C.L. ; Ito, C. ; Lepkowski, T.R.
Assuntos: Applied sciences ; Current measurement ; Cutoff frequency ; Electronics ; Exact sciences and technology ; Gallium arsenide ; HEMTs ; Indium gallium arsenide ; MESFETs ; Millimeter wave transistors ; MODFETs ; PHEMTs ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transconductance ; Transistors
É parte de: IEEE electron device letters, 1989-05, Vol.10 (5), p.186-188
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/mm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency f/sub t/ of 68 GHz with an average f/sub t/ of 62 GHz across the wafer. The 0.25- mu m gate MESFETs also exhibit a maximum-available-gain cutoff frequency f/sub t/ greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.< >
Editor: New York, NY: IEEE
Idioma: Inglês

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0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

Wang, G.W. ; Feng, M. ; Lau, C.L. ; Ito, C. ; Lepkowski, T.R.

New York, NY: IEEE

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