Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

Yurasov, D V ; Drozdov, M N ; Murel, A V ; Shaleev, M V ; Zakharov, N D ; Novikov, A V

Journal of applied physics, 2011-06, Vol.109 (11), p.113533-113533-7 [Periódico revisado por pares]

United States: American Institute of Physics

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