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Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study

Thomas, O. ; Mocuta, C. ; Putero, M. ; Richard, M.-I. ; Boivin, P. ; Arnaud, F.

Microelectronic engineering, 2021-05, Vol.244-246, p.111573, Article 111573 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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Título:
Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study
Autor: Thomas, O. ; Mocuta, C. ; Putero, M. ; Richard, M.-I. ; Boivin, P. ; Arnaud, F.
Assuntos: Amorphous materials ; Annealing ; Antimony ; Condensed Matter ; Crystallization ; Diffraction ; Diffraction patterns ; Engineering Sciences ; Germanium ; Grain size ; GST ; Heating rate ; Materials ; Materials Science ; Micro and nanotechnologies ; Microelectronics ; Nanostructured materials ; Non-volatile memories ; Phase change materials ; Physics ; Strain ; Synchrotron ; Synchrotron radiation ; Synchrotrons ; Tellurium ; Thin films ; X-ray diffraction
É parte de: Microelectronic engineering, 2021-05, Vol.244-246, p.111573, Article 111573
Descrição: Ge-rich and N-doped Ge-Sb-Te thin films and patterned structures for memory applications are investigated in situ during annealing up to 500 °C with a heating rate of 2 °C/min using synchrotron x-ray diffraction. The initial material is amorphous. Under these annealing conditions, Ge crystallization occurs at 340 °C and precedes the one of cubic Ge2Sb2Te5 by about 15 °C. In situ monitoring of diffraction allows for a quantification of crystallized quantity, grain size and elastic strain during the material transformation. Increasing N doping reduces the amount of crystallized Ge and Ge grain size. These results bring important insights into the multiphase crystallization of Ge-rich GST phase change materials for memory applications. [Display omitted] •in-situ synchrotron x-ray diffraction at DiffAbs beamline (SOLEIL synchrotron).•Monitoring of crystallization of Ge-rich N-doped Ge-Sb-Te thin films and nanostructures.•Ge crystallizes before GST (15 °C difference in crystallization temperature).•Thermoelastic behavior is different between films and patterned structures and is dominated by Ge.•Nitrogen doping strongly reduces Ge crystallization.
Editor: Amsterdam: Elsevier B.V
Idioma: Inglês

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Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study

Thomas, O. ; Mocuta, C. ; Putero, M. ; Richard, M.-I. ; Boivin, P. ; Arnaud, F.

Amsterdam: Elsevier B.V

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