The molecular beam epitaxial growth of GaAs( [formula omitted][formula omitted][formula omitted])/Si(111): a variable growth temperature study

Woolf, D.A. ; Westwood, D.I. ; Anderson, M.A. ; Williams, R.H.

Applied surface science, 1991-06, Vol.50 (1), p.445-449 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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