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A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories

Roca, M. ; Laffont, R. ; Micolau, G. ; Lalande, F. ; Pizzuto, O.

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1070-1073 [Periódico revisado por pares]

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Título:
A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories
Autor: Roca, M. ; Laffont, R. ; Micolau, G. ; Lalande, F. ; Pizzuto, O.
Assuntos: Applied sciences ; Design. Technologies. Operation analysis. Testing ; Dielectric, amorphous and glass solid devices ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
É parte de: Microelectronics and reliability, 2009-09, Vol.49 (9), p.1070-1073
Descrição: In this paper, we suggest a new computation method to simulate the temperature behavior of Fowler–Nordheim tunneling current through the oxide of an EEPROM cell based on surface potential evaluation with temperature dependence. The main idea of this paper is to simulate the tunneling current temperature dependence with only Si–SiO 2 barrier height and surface potential dependences with temperature. Parameters are experimentally extracted from large SOS capacitor measurements. So, final results of the programming window have shown comparing to simulations and measurements.
Editor: Kidlington: Elsevier Ltd
Idioma: Inglês

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