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Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

Ha, S-K ; Bounouar, S ; Song, J D ; Lim, J Y ; Donatini, F ; Dang, L S ; Poizat, J P ; Kim, J S ; Choi, W J ; Han, I K

AIP conference proceedings, 2011, Vol.1399 (1) [Periódico revisado por pares]

United States

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Título:
Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources
Autor: Ha, S-K ; Bounouar, S ; Song, J D ; Lim, J Y ; Donatini, F ; Dang, L S ; Poizat, J P ; Kim, J S ; Choi, W J ; Han, I K
Assuntos: ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; Aluminum gallium arsenides ; ARSENIC COMPOUNDS ; ARSENIDES ; BOSONS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYPTOGRAPHY ; CRYSTAL GROWTH METHODS ; DENSITY ; DROPLETS ; ELEMENTARY PARTICLES ; EMISSION ; ENERGY-LEVEL TRANSITIONS ; EPITAXY ; EXCITATION ; EXCITONS ; FREQUENCY MEASUREMENT ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; LUMINESCENCE ; MASSLESS PARTICLES ; NANOSCIENCE AND NANOTECHNOLOGY ; NANOSTRUCTURES ; PARTICLES ; PHOTOLUMINESCENCE ; PHOTON EMISSION ; PHOTONS ; PHYSICAL PROPERTIES ; PNICTIDES ; QUANTUM CRYPTOGRAPHY ; QUANTUM DOTS ; QUASI PARTICLES ; RESOLUTION ; TIME RESOLUTION ; TIMING PROPERTIES
É parte de: AIP conference proceedings, 2011, Vol.1399 (1)
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.
Editor: United States
Idioma: Inglês

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Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

Ha, S-K ; Bounouar, S ; Song, J D ; Lim, J Y ; Donatini, F ; Dang, L S ; Poizat, J P ; Kim, J S ; Choi, W J ; Han, I K

United States

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