Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

NAZAROV, A. N ; OSIYUK, I. N ; SUN, J. M ; YANKOV, R. A ; SKORUPA, W ; TYAGULSKII, I. P ; LYSENKO, V. S ; PRUCNAL, S ; GEBEL, T ; REBOHLE, L

Applied physics. B, Lasers and optics, 2007-03, Vol.87 (1), p.129-134 [Periódico revisado por pares]

Berlin: Springer

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