Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies

Il’in, I. V. ; Uspenskaya, Yu. A. ; Kramushchenko, D. D. ; Muzafarova, M. V. ; Soltamov, V. A. ; Mokhov, E. N. ; Baranov, P. G.

Physics of the solid state, 2018-04, Vol.60 (4), p.644-662 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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