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Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs

Ridgway, M.C. ; Everett, S.E. ; Glover, C.J. ; Kluth, S.M. ; Kluth, P. ; Johannessen, B. ; Hussain, Z.S. ; Llewellyn, D.J. ; Foran, G.J. ; Azevedo, G. de M.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-09, Vol.250 (1-2), p.287-290 [Periódico revisado por pares]

Elsevier B.V

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  • Título:
    Atomic-scale structure of irradiated GaN compared to amorphised GaP and GaAs
  • Autor: Ridgway, M.C. ; Everett, S.E. ; Glover, C.J. ; Kluth, S.M. ; Kluth, P. ; Johannessen, B. ; Hussain, Z.S. ; Llewellyn, D.J. ; Foran, G.J. ; Azevedo, G. de M.
  • Assuntos: Amorphous ; EXAFS ; GaAs ; GaN ; GaP ; Ion irradiation
  • É parte de: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-09, Vol.250 (1-2), p.287-290
  • Descrição: We have compared the atomic-scale structure of ion irradiated GaN to that of amorphised GaP and GaAs. While continuous and homogenous amorphised layers were easily achieved in GaP and GaAs, ion irradiation of GaN yielded both structural and chemical inhomogeneities. Transmission electron microscopy revealed GaN crystallites and N2 bubbles were interspersed within an amorphous GaN matrix. The crystallite orientation was random relative to the unirradiated epitaxial structure, suggesting their formation was irradiation-induced, while the crystallite fraction was approximately constant for all ion fluences beyond the amorphisation threshold, consistent with a balance between amorphisation and recrystallisation processes. Extended X-ray absorption fine structure measurements at the GaK-edge showed short-range order was retained in the amorphous phase for all three binary compounds. For ion irradiated GaN, the stoichiometric imbalance due to N2 bubble formation was not accommodated by Ga–Ga bonding in the amorphous phase or precipitation of metallic Ga but instead by a greater reduction in Ga coordination number.
  • Editor: Elsevier B.V
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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