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Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer

Yung Hsun Lin ; Liu, Y S ; Liu, C Y

IEEE photonics technology letters, 2010-10, Vol.22 (19), p.1443-1445

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Título:
Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
Autor: Yung Hsun Lin ; Liu, Y S ; Liu, C Y
Assuntos: Annealing ; Conducting materials ; Conductivity ; Conferences ; Contact resistance ; Doping ; Indium tin oxide ; indium-tin-oxide (ITO) ; Light emitting diodes ; light-emitting diodes (LEDs) ; Optical fibers ; Power generation ; Sputtering ; Substrates ; Thin films ; Titanium ; Transistors ; Transmittance ; ultraviolet (UV) sources
É parte de: IEEE photonics technology letters, 2010-10, Vol.22 (19), p.1443-1445
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Conference-1
ObjectType-Feature-3
content type line 23
SourceType-Conference Papers & Proceedings-2
Descrição: With Ti doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 °C in vacuum, the transmittance of Ti-doped ITO (Ti : ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti : ITO thin film is equivalent with that of ITO thin film (4.248×10 -4 Ω·cm). Using Ti : ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer.
Editor: New York: IEEE
Idioma: Inglês

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