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Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

Zhao, Weijie ; Ribeiro, R. M ; Toh, Minglin ; Carvalho, Alexandra ; Kloc, Christian ; Castro Neto, A. H ; Eda, Goki

Nano letters, 2013-11, Vol.13 (11), p.5627-5634 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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Título:
Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2
Autor: Zhao, Weijie ; Ribeiro, R. M ; Toh, Minglin ; Carvalho, Alexandra ; Kloc, Christian ; Castro Neto, A. H ; Eda, Goki
Assuntos: Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electron states ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals ; Exact sciences and technology ; Excitons and related phenomena ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics ; Thermal properties of condensed matter ; Thermal properties of small particles, nanocrystals, nanotubes
É parte de: Nano letters, 2013-11, Vol.13 (11), p.5627-5634
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: It has been well-established that single layer MX2 (M = Mo, W and X = S, Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ–K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton photoluminescence peak. Highly anisotropic thermal expansion of the lattice and the corresponding evolution of the band structure result in a distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys.
Editor: Washington, DC: American Chemical Society
Idioma: Inglês

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Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

Zhao, Weijie ; Ribeiro, R. M ; Toh, Minglin ; Carvalho, Alexandra ; Kloc, Christian ; Castro Neto, A. H ; Eda, Goki

Washington, DC: American Chemical Society

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