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Wavelength dependence of laser-induced excitation dynamics in silicon

Venkat, Prachi ; Otobe, Tomohito

Applied physics. A, Materials science & processing, 2022-09, Vol.128 (9), Article 810 [Periódico revisado por pares]

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Título:
Wavelength dependence of laser-induced excitation dynamics in silicon
Autor: Venkat, Prachi ; Otobe, Tomohito
Assuntos: Characterization and Evaluation of Materials ; COLA 2021/2022 ; Condensed Matter Physics ; Excitation ; Finite difference time domain method ; Laser damage ; Lasers ; Machines ; Manufacturing ; Nanotechnology ; Optical and Electronic Materials ; Optical properties ; Phonons ; Physics ; Physics and Astronomy ; Plasma heating ; Processes ; S.i. : Cola 2021/2022 ; Silicon ; Surfaces and Interfaces ; Thin Films ; Yield point
É parte de: Applied physics. A, Materials science & processing, 2022-09, Vol.128 (9), Article 810
Descrição: Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron–phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.
Editor: Berlin/Heidelberg: Springer Berlin Heidelberg
Idioma: Inglês

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