Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I–V characteristics

Croitoru, M.D. ; Gladilin, V.N. ; Fomin, V.M. ; Devreese, J.T. ; Magnus, W. ; Schoenmaker, W. ; Sorée, B.

Solid state communications, 2008-07, Vol.147 (1), p.31-35 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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