Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment
谢元斌 全思 马晓华 张进城 李青民 郝跃
Journal of semiconductors, 2011-06, Vol.32 (6), p.69-72
[Periódico revisado por pares]
IOP Publishing
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