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Electron-hole liquid in strained SiGe layers of silicon heterostructures

Burbaev, T. M. ; Bobrik, E. A. ; Kurbatov, V. A. ; Rzaev, M. M. ; Sibel’din, N. N. ; Tsvetkov, V. A. ; Schäffler, F.

JETP letters, 2007-06, Vol.85 (7), p.331-334 [Periódico revisado por pares]

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Título:
Electron-hole liquid in strained SiGe layers of silicon heterostructures
Autor: Burbaev, T. M. ; Bobrik, E. A. ; Kurbatov, V. A. ; Rzaev, M. M. ; Sibel’din, N. N. ; Tsvetkov, V. A. ; Schäffler, F.
Assuntos: Binding energy ; Critical temperature ; Density ; Electrons ; Excitons ; Heterostructures ; Holes (electron deficiencies) ; Silicon germanides ; Single crystals ; Solid solutions ; Thin films
É parte de: JETP letters, 2007-06, Vol.85 (7), p.331-334
Descrição: The electron-hole liquid has been found in strained SiGe thin films of Si/Si1−xGex/Si heterostructures. The density and binding energy of the electron-hole liquid have been determined. Owing to the presence of internal strains in the SiGe layer, the density and binding energy are significantly smaller than the respective quantities for the electron-hole liquid in a bulk single crystal of the solid solution of the same composition. The critical temperature of the transition from the exciton gas to the electron-hole liquid is estimated using the experimental data. The Mott transition (from the exciton gas to electron-hole plasma) occurs above the critical temperatures for high excitation intensities.
Editor: New York: Springer Nature B.V
Idioma: Inglês

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