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CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding

Kohneh Poushi, S. S. ; Goll, B. ; Schneider-Hornstein, K. ; Hofbauer, M. ; Zimmermann, Horst

IEEE photonics technology letters, 2022-09, Vol.34 (18), p.945-948

New York: IEEE

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Título:
CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding
Autor: Kohneh Poushi, S. S. ; Goll, B. ; Schneider-Hornstein, K. ; Hofbauer, M. ; Zimmermann, Horst
Assuntos: Avalanche diodes ; Avalanche photodiode (APD) ; Avalanche photodiodes ; Bandwidth ; Carrier transport ; Cathodes ; CMOS ; CMOS integrated photodetector ; Crowding ; Electric fields ; field-line crowding ; Optical attenuators ; Optical device fabrication ; Optical saturation ; Optical variables measurement ; Photodiodes ; spherical avalanching field
É parte de: IEEE photonics technology letters, 2022-09, Vol.34 (18), p.945-948
Descrição: This letter presents a new Si CMOS linear-mode avalanche photodiode (APD) based on an electric field distribution formed by field-line crowding. In this structure, a spherical avalanching electric field is enforced by field-line crowding due to the curvature of the half-sphere cathode (n-well). The electric field extends radially and, therefore, the entire low-doped epitaxial layer serves as charge collection zone. This APD can provide high responsivity and bandwidth due to its thick absorption zone and drift-based carrier transport. Measurements using a 675 nm laser source at 200 nW optical power show a maximum bandwidth of 1.6 GHz while the responsivity is 32 A/W. In addition, a maximum responsivity of 3.05 \times \,\,10^{3} A/W at 5 nW optical power is achieved. Due to the high avalanche gain, large bandwidth, and CMOS compatibility without any process modification, this APD is a promising optical detector for many applications.
Editor: New York: IEEE
Idioma: Inglês

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CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding

Kohneh Poushi, S. S. ; Goll, B. ; Schneider-Hornstein, K. ; Hofbauer, M. ; Zimmermann, Horst

New York: IEEE

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